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High-temperature conduction behavior of carbon nanotube fiber from 25 degrees C to 1100 degrees C
Zhang, Xiaoshan; Yang, Lingwei; Liu, Haitao
Demonstration of transmission high energy electron microscopy
Merrill, F. E.; Goett, J.; Gibbs, J. W.; Imhoff, S. D.; Mariam, F. G.; Morris, C. L.; Neukirch, L. P.; Perry, J.; Poulson, D.; Simpson, R.; Volegov, P. L.; Walstrom, P. L.; Wilde, C. H.; Hast, C.; Jobe, K.; Smith, T.; Wienands, U.; Clarke, A. J.; Tourret, D.
Response to Comment on ‘Thickness and temperature depending intermixing of SiOx/SiO2 and SiOxNy/SiO2 superlattices: Experimental observation and thermodynamic modeling’ [Appl. Phys. Lett. 109, 166101 (2016)]
Zhigunov, D. M.; Sarikov, A.; Chesnokov, Yu. M.; Vasiliev, A. L.; Zakharov, N.; Kashkarov, P. K.
Thickness and temperature depending intermixing of SiOx/SiO2 and SiOxNy/SiO2 superlattices: Experimental observation and thermodynamic modeling
Zhigunov, D. M.; Sarikov, A.; Chesnokov, Yu. M.; Vasiliev, A. L.; Zakharov, N.; Kashkarov, P. K.
An atomistic investigation of the impact of in-plane uniaxial stress during solid phase epitaxial regrowth
Sklenard, Benoit; Barbe, Jean-Charles; Batude, Perrine; Rivallin, Pierrette; Tavernier, Clement; Cristoloveanu, Sorin; Martin-Bragado, Ignacio
{111} local configurations: The main source of silicon defects during solid phase epitaxial regrowth modeled by lattice kinetic Monte Carlo
Martin-Bragado, Ignacio
Modeling of {311} facets using a lattice kinetic Monte Carlo three-dimensional model for selective epitaxial growth of silicon
Martin-Bragado, Ignacio; Moroz, Victor
