IMDEA Materials Institute starts COMPOSE3 project, based on the use of new materials to replace today’s silicon, and on taking an innovative design approach where transistors are stacked vertically, known as 3D stacking.

IMDEA Materials Institute will use Lattice Kinetic Monte Carlo to simulate the physical mechanisms of Source/Drain regrowth modeling in III-V and IV materials for hybrid microelectronic devices. The models will include a crystallographic and chemical component to account for the structure plus a finite element method algorithm to analyze the stress in the regrown layers. The goal  is to create models to optimize the source/drain regrowth and to advance the current understanding of such process.

See COMPOSE3 project description and press release attached